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October 2013
FDH3632 / FDP3632 / FDB3632
N-Channel PowerTrench ? MOSFET
100 V, 80 A, 9 m Ω
Features
? R DS(ON) = 7.5 m ? (Typ.), V GS = 10 V, I D = 80 A
? Q g (tot) = 84 nC (Typ.), V GS = 10 V
? Low Miller Charge
? Low Q rr Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
Applications
? Synchronous Rectificatio n
? Battery Protection Circui t
? Motor Drives and Uninterruptible Power Supplie s
? Micro Solar Inverte r
? R oH S Compliant
D
D
GD
G
D
S
TO-247
S
TO-220
G
S
D 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Continuous (T amb = 25 C, V GS = 10V, R θ JA = 43 C/W)
Symbol
V DSS
V GS
I D
E AS
P D
T J , T STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T C < 111 o C, V GS = 10V)
o o
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
FD H 3632 / F DP3632 /
FD B 3632
100
± 20
80
12
Figure 4
337
310
2.07
-55 to 175
Unit
V
V
A
A
A
mJ
W
W/ o C
o C
Thermal Characteristics
R θ JC
Thermal Resistance Junction to Case, Max. TO-220, D 2 -PAK , TO-247
0.48
o
C/W
R θ JA
Thermal Resistance Junction to Ambient, Max. TO-220 (Note 2)
62
o C/W
R θ JA
Thermal Resistance Junction to Ambient D 2 -PAK , Max. 1in 2 copper pad area
43
o
C/W
R θ JA
Thermal Resistance Junction to Ambient, Max. TO-247 (Note 2)
30
o C/W
? 200 4 Fairchild Semiconductor Corporation
FDH3632 / FDP3632 / FDB3632 Rev. C 5
1
www.fairchildsemi.com
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